AlGaN/GaN HEMTs-an overview of device operation and applications
… Zheng, and U. K. Mishra, “Systematic characterization of Cl reactive ion etching for gate …
DenBaars, and UK Mishra, “Gallium nitride based high power heterojunction field effect transistor…
DenBaars, and UK Mishra, “Gallium nitride based high power heterojunction field effect transistor…
Ultrawide‐bandgap semiconductors: research opportunities and challenges
Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4
eV of GaN, represent an exciting and challenging new area of research in semiconductor …
eV of GaN, represent an exciting and challenging new area of research in semiconductor …
Overview: japanese encephalitis
… In this study, the seizures were not related to outcome (Misra and Kalita, 2001). In another
study from Vietnam, 30.6% patients had seizure and it was related to raised CSF pressure, …
study from Vietnam, 30.6% patients had seizure and it was related to raised CSF pressure, …
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior… - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
… Xu, BP Keller, SP DenBaars, and UK Mishra, BGallium nitride based high power heterojunction
field effect transistors: Process development and present status at UCSB,[ IEEE Trans. …
field effect transistors: Process development and present status at UCSB,[ IEEE Trans. …
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
… The review of this paper was arranged by Editor UK Mishra. R. Vetury was with the Electrical
and Computer Engineering Department, University of California, Santa Barbara, CA 93106 …
and Computer Engineering Department, University of California, Santa Barbara, CA 93106 …
30-W/mm GaN HEMTs by field plate optimization
…, PM Chavarkar, T Wisleder, UK Mishra… - IEEE Electron …, 2004 - ieeexplore.ieee.org
… Parikh, and UK Mishra, “Biasdependent performance of high-power AlGaN/GaN HEMTs,” in
… Heikman, SP DenBaars, and U. K. Mishra, “High breakdown GaN HEMTs with overlapping …
… Heikman, SP DenBaars, and U. K. Mishra, “High breakdown GaN HEMTs with overlapping …
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field
effect transistors is examined theoretically and experimentally. Based on an analysis of the …
effect transistors is examined theoretically and experimentally. Based on an analysis of the …
Estimated stocks of circumpolar permafrost carbon with quantified uncertainty ranges and identified data gaps
Soils and other unconsolidated deposits in the northern circumpolar permafrost region store
large amounts of soil organic carbon (SOC). This SOC is potentially vulnerable to …
large amounts of soil organic carbon (SOC). This SOC is potentially vulnerable to …
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
The absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate
was determined from transmission measurements at room temperature. A strong, well …
was determined from transmission measurements at room temperature. A strong, well …
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
We report temperature-dependent time-integrated and time-resolved photoluminescence (PL)
studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical …
studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical …